4.7 Article

The influence of growth temperature and oxygen on the phase compositions of CuAlO2 thin films prepared by pulsed laser deposition

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 466, 期 1-2, 页码 408-411

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2007.11.064

关键词

Semiconductors; Laser processing; Crystal structured; X-ray diffraction

资金

  1. Chinese National Foundation [50672097]
  2. Anhui province Foundation [050440703]
  3. Department of Applied Laser techniques, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

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Single-phase CuAlO2 thin films with (001) orientation were prepared by PLD with ex situ annealing at 1173 K under N-2 atmosphere. The phase compositions of the films were found to be significantly dependent on the deposition oxygen pressure. The optimum deposition oxygen pressure for single-phase CuAlO2 thin films was 2.3-3.2 x 10(-2) Pa. The average transmittance of the similar to 50 nm-thick film in the visible region is similar to 60% and the direct optical band gap is similar to 3.43 eV. The single-phase film has a resistivity of 99.2 Omega cm at 300 K. (C) 2007 Elsevier B.V. All rights reserved.

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