期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 463, 期 1-2, 页码 435-439出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2007.09.030
关键词
co-doped ZnO; diluted magnetic semiconductors; EXAFS
资金
- Shanghai Nanotechnology Promotion Center [0452nm071]
- National Natural Science Foundation of China [50702071, 50772122]
The Zn(0.95)CO(0.05)O films were deposited under different oxygen partial pressure (P(O2)) by inductively coupled plasma enhanced physical vapor deposition. The effect of P(O2) on the local structure of Zn(0.95)CO(0.05)O films was investigated by X-ray absorption spectroscopy (XAS) at Co K-edge and L-edge. The Co L-edge XAS spectra show the spin-orbit splitting and typical shake-up satellites of the Co(2+) ionization states. The XAS spectra at the Co K-edge indicate that Co ions substitute for Zn(2+) sites in the tetrahedral configuration without changing the wurtzite structure. The qualitative analyses of X-ray absorption near edge structure (XANES) reveal that the main defects are oxygen vacancies when Zn(0.95)Co(0.05)O films were deposited under very low P(O2). The extended X-ray absorption fine structure (EXAFS) analyses provide no significant bond length deviation from the pure ZnO structure. The coordination number varies slightly with different samples. The correlation between the coordination number and the pseudo Debye-Waller factor implies that the disorder is increased in samples prepared under low P(O2). (C) 2007 Elsevier B.V. All fights reserved.
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