期刊
NANO LETTERS
卷 15, 期 3, 页码 1883-1890出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl5047329
关键词
phosphorene; flexible transistor; ambipolar conduction; frequency doubler; amplifiers; AM demodulator
类别
资金
- Office of Naval Research (ONR) [N00014-1110190]
- NSF-NASCENT Engineering Research Center [EEC-1160494]
High-mobility two-dimensional (2D) Semi-conductors are desirable for high-performance mechanically flexible nano electronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V.s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.
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