期刊
NANO LETTERS
卷 15, 期 11, 页码 7503-7507出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03124
关键词
topological insulators; band bending; bismuth selenide; Shubnikov-de Haas oscillations; chemical vapor transport
类别
资金
- European Magnetic Field Laboratory (EMFL) [TSC17-114]
- German Research Foundation DFG [SPP 1666]
Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 x 10(19) cm(-3) to 6 x 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据