期刊
NANO LETTERS
卷 15, 期 8, 页码 4928-4934出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00668
关键词
Transition metal dichalcogenides; integrated circuits; complementary logic; CMOS electronics; air stable doping; low power electronics
类别
资金
- STC Center for Integrated Quantum Materials, NSF [DMR-1231319]
- Army Research Laboratory
- Office of Naval Research (ONR) PECASE Program
- NSF [TG-DMR120049, TG-PHY120021]
Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (similar to 38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.
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