期刊
NANO LETTERS
卷 15, 期 12, 页码 7905-7912出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03768
关键词
2D materials; transition metal dichalcogenides; MoS2; hot-electron transport; high-current gain
类别
资金
- National Science Foundation (NSF) [NSF-EFRI-1433541]
- Office of Naval Research
- SPAWAR Systems Center Pacific's In-House Laboratory Independent Research program
- Department of Defense SMART (Science, Mathematics, and Research for Transformation) Scholarship
- National Science Council of Taiwan [NSC 103-2917-I-564-017]
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1433541] Funding Source: National Science Foundation
The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (alpha similar to 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications.
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