期刊
NANO LETTERS
卷 15, 期 4, 页码 2594-2599出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00160
关键词
transition metal dichalcogenide; graphene; quasiparticle bandgap; Coulomb interaction; screening; STM/STS
类别
资金
- Office of Basic Energy Sciences, Department of Energy sp2 Program (STM instrumentation development and operation)
- SciDAC Program on Excited State Phenomena in Energy Materials - U.S. Department of Energy, Office of Basic Energy Sciences and of Advanced Scientific Computing Research at Lawrence Berkeley National Laboratory [DE-AC02-05CH11231]
- National Science Foundation [DMR-1206512, DMR10-1006184]
- National Research Foundation, Prime Minister Office, Singapore, under Medium Sized Centre Program
- CRP [R-144-000-295-281]
- Austrian Science Fund (FWF) [J3026-N16]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006184] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1206512] Funding Source: National Science Foundation
- Austrian Science Fund (FWF) [J 3026] Funding Source: researchfish
- Austrian Science Fund (FWF) [J3026] Funding Source: Austrian Science Fund (FWF)
Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.
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