期刊
NANO LETTERS
卷 15, 期 2, 页码 1296-1301出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl504493d
关键词
quantum spin Hall insulator; two-dimensional chloridized gallium bismuthide; gapless edge states; large band gap; band inversion; first-principles calculations
类别
资金
- National Basic Research Program of China [2012CB932302]
- National Natural Science Foundation of China [91221101, 21433006]
- 111 project [B13209]
- Taishan Scholar Program of Shandong
- National Super Computing Centre in Jinan
Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices but presently is achieved only at extremely low temperature. Searching for the large-gap QSH insulators with strong spinorbit coupling (SOC) is the key to increase the operating temperature. We demonstrate theoretically that this can be solved in the chloridized gallium bismuthide (GaBiCl2) monolayer, which has nontrivial gaps of 0.95 eV at the G point, and 0.65 eV for bulk, as well as gapless edge states in the nanoribbon structures. The nontrivial gaps due to the band inversion and SOC are robust against external strain. The realization of the GaBiCl2 monolayer will be beneficial for achieving QSH effect and related applications at high temperatures.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据