期刊
NANO LETTERS
卷 15, 期 12, 页码 8155-8161出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03597
关键词
Molybdenum disulfide; stacking ultralow-frequency Raman spectroscopy; photoluminescence; first-principles calculations
类别
资金
- MOE in Singapore [MOE2012-T2-2-124, MOE2011-T3-1-005]
- NTU-A*STAR Silicon Technologies Centre of Excellence [112 3510 0003]
- U.S. Department of Energy, Office of Science, Basic Energy Science, Materials Sciences and Engineering Division
The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin orbit coupling (SOC) and interlayer coupling in different structural symmetries. Such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks.
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