4.8 Article

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates

期刊

NANO LETTERS
卷 15, 期 5, 页码 3147-3152

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00240

关键词

vertical growth; surface Orientation; topological insulator nanoplates; epitaxial alignment; surface kinetics

资金

  1. National 973 Program of China [2013CB934600]
  2. National Science Foundation of China [11174244, 51390474, 11234011, 11327901]
  3. Zhejiang Provincial Natural Science Foundation of China [LR12A04002]
  4. Ministry of Education [20120101110087, IRT13037]
  5. U.S. Department of Energy [DE-SC0002623]

向作者/读者索取更多资源

Nanostructures are not only attractive for fundamental research but also offer great promise for bottom-up nanofabrications. In the past, the growth of one-dimensional Vertical/planar nanomaterials such as nano-wires has made significant progresses. However, works on two-dimensional nanomaterials are still lacking, especially for those grown out of a substrate. We report here a vertical growth of topological insulator, Bi2Se3 and Bi2Te3, nanoplates on mica. In stark contrast to the general belief, these nanoplates are not prisms exposing (100) lateral surfaces, which are expected to minimize the surface area. Instead, they are frustums, enclosed by (01-4), (015), and (001) facets. First-principles calculations, combined with experiments, suggest the importance of surface oxidation in forming these unexpected surfaces.

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