Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire

High-performance solar-blind (200-280 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO-Ga2O3 core-shell microwires. The responsivity Can-reach up to 1.3 X 10(3) A/W under -6 V bias. Moreover, the corresponding detectivity was as high as 991 X 10(14) cm.Hz(1/2)/W. The device also, showed a fast response, with a rise time shorter than 20 mu s and a decay tine of 42 mu s. The quality of the detectors in solar-blind waveband is comparable to or even higher than that of commercial Si APD (APP120A2 from Thorlabs Inc.), with a responsivity similar to 8A/W, detectivity similar to 10(12) cm.Hz(1/2)/W, and response time similar to 20 ns. The high performance of this APD make it highly suitable for practical applications as solar-blind photodetectors, and this core-shell microstructure heterojunction design method would provide a new approach for realizing an APD device.