期刊
NANO LETTERS
卷 15, 期 8, 页码 4865-4875出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00282
关键词
nanowire; STM; InSb; InAs; III-V; heterostructure
类别
资金
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- Crafoord Foundation
- Knut and Alice Wallenberg Foundation
- European Research Council under the European Union [259141]
We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 +/- 20 degrees C under an H-2 pressure 2 X 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nano-wires, our findings should be applicable far beyond the present materials system.
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