期刊
NANO LETTERS
卷 15, 期 5, 页码 3048-3055出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00016
关键词
InSe; 2D photodetector; avalanche effect; impact ionization
类别
资金
- Robert A. Welch Foundation [C-1220]
- National Security Science and Engineering Faculty Fellowship (NSSEFF) [N00244-09-1-0067]
- Office of Naval Research [N00014-10-1-0989]
- MURI ARO [W911NF-11-1-0362]
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - DARPA
- Netherlands organization for scientific research (NWO) [680-50-1205]
- Welch grant [C-1716]
- NSF ECCS [1327093]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1327093] Funding Source: National Science Foundation
Atomically thin photodetectors based on 2D materials have attracted great interest due to their potential as highly energy-efficient integrated devices. However, photoinduced carrier generation in these media is relatively poor due to low optical absorption, limiting device performance. Current methods for overcoming this problem, such as reducing contact resistances or back gating, tend to increase dark current and suffer slow response times. Here, we realize the avalanche effect in a 2D material-based photodetector and show that avalanche multiplication can greatly enhance the device response of an ultrathin InSe-based photodetector. This is achieved by exploiting the large Schottky barrier formed between InSe and Al electrodes, enabling the application of a large bias voltage. Plasmonic enhancement of the photosensitivity, achieved by patterning arrays of Al nanodisks onto the InSe layer, further improves device efficiency. With an external quantum efficiency approaching 866%, a dark current in the picoamp range, and a fast response time of 87 mu s, this atomic layer device exhibits multiple significant advances in overall performance for this class of devices.
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