期刊
NANO LETTERS
卷 15, 期 4, 页码 2318-2323出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl504447j
关键词
GaInN/GaN; nanowire; LED; high frequency operation; photoluminescence; electroluminescence
类别
资金
- EU Ziel2 project NaSoL [280334522]
- German Research Foundation, Research Group [FOR 1616]
The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据