4.8 Article

Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization

期刊

NANO LETTERS
卷 15, 期 12, 页码 7847-7852

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04039

关键词

Nanowires; heterostructures; quantum well; photocurrent; Stark effect

资金

  1. National Science Foundation [DMR 1507844, DMR 151373, ECCS 1509706]
  2. Australian Research Council
  3. ARC [LE0454166]
  4. Direct For Mathematical & Physical Scien
  5. Division Of Materials Research [1531373, 1507844] Funding Source: National Science Foundation
  6. Div Of Electrical, Commun & Cyber Sys
  7. Directorate For Engineering [1100489] Funding Source: National Science Foundation
  8. Div Of Electrical, Commun & Cyber Sys
  9. Directorate For Engineering [1509706] Funding Source: National Science Foundation

向作者/读者索取更多资源

In this Letter, we explore the nature of exciton localization in single GaAs/AlGaAs nanowire quantum well tube (QWT) devices using photocurrent (PC) spectroscopy combined with simultaneous photoluminescence (PL) and photoluminescence excitation (PLE) measurements. Excitons confined to GaAs quantum well tubes of 8 and 4 nm widths embedded into an AlGaAs barrier are seen to ionize at high bias levels. Spectroscopic signatures of the ground and excited states confined to the QWT seen in PL, PLE, and PC data are consistent with simple numerical calculations. The demonstration of good electrical contact with the QWTs enables the study of Stark effect shifts in the sharp emission lines of excitons localized to quantum dot-like states within the QWT. Atomic resolution cross-sectional TEM measurements and an analysis of the quantum confined Stark effect of these dots provide insights into the nature of the exciton localization in these nanostructures.

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