期刊
NANO LETTERS
卷 16, 期 1, 页码 88-92出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b02920
关键词
Quantum dot; spin qubits; hole transport; Lande g-factor; silicon; MOSFET
类别
资金
- European Communitys Seventh Framework [323841, 610637]
- European Research Council under ERC Grant (Hybrid Nano) [280043]
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.
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