期刊
NANO LETTERS
卷 15, 期 3, 页码 2203-2211出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00697
关键词
Memristor; resistive switching second-order; dynamics; synapse; Ca2+; synaptic plasticity
类别
资金
- AFOSR through MURI [FA9550-12-1-0038]
- National Science Foundation (NSF) [ECCS-0954621, CCF-1217972]
- DARPA [HR0011-13-2-0015]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A6A3A03061299]
- Direct For Computer & Info Scie & Enginr [1217972] Funding Source: National Science Foundation
Memristors have been extensively studied for,data storage and low-power computation applications. In this: study, we show that memristors offer more than simple resistance change. Specifically; the dynamic evolutions of internal state variables allow an oxide:based memristor to exhibit Ca2+-like dynamics that natively encode timing information and regulate synaptic weights. Such a device can be modeled as a, second-order memristor and allow the implementation of critical Synaptic functions realistically using simple spike forms based solely,on spike activity.
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