期刊
NANO LETTERS
卷 15, 期 12, 页码 8245-8249出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03770
关键词
Topological insulator; molecular beam epitaxy; heterostructure; thin films; quantum Hall effect
类别
资金
- ONR [N000141210456]
- NSF [DMR-1308142, DMR-0844807, DMR-1506618, DMR-1157490]
- GBMF's EPiQS Initiative [GBMF4418]
- GBMF [GBMF2628]
- DOE [DE-FG0203ER46066, DE-AC02-98CH10886]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1506618, 1308142] Funding Source: National Science Foundation
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)(2)Se-3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.
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