期刊
NANO LETTERS
卷 15, 期 5, 页码 3212-3216出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00396
关键词
Graphene; graded-potential gate; suppressed conductance; field-effect transistor; electrically configurable devices
类别
资金
- Natural Science Foundation of China (NSFC) [60911130231, 21173058, 21203038]
A device architecture for electrically configurable graphene field-effect transistor (GFET) using a graded-potential gate is present. The gating scheme enables a linearly varying electric field that modulates the electronic structure of graphene and causes a continuous shift of the Dirac points along the channel of GFET. This spatially varying electrostatic modulation produces a pseudobandgap observed as a suppressed conductance of graphene within a controllable energy range. By tuning the electrical gradient of the gate, a GFET device is reversibly transformed between ambipolar and n- and p-type unipolar characteristics. We further demonstrate an electrically programmable complementary inverter, showing the extensibility of the proposed architecture in constructing logic devices based on graphene and other Dirac materials. The electrical configurable GFET might be explored for novel functionalities in smart electronics.
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