期刊
NANO LETTERS
卷 15, 期 4, 页码 2229-2234出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl503806p
关键词
Nanodomains; ferroelastic switching; ferroelectricity; Pb(Zr0.2Ti0.8)O-3; thin film
类别
资金
- Office of Naval Research (ONR)
- Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers
- MARCO
- DARPA
- NSF E3S Center at Berkeley
- Qualcomm Innovation Fellowship
We report a voltage controlled reversible creation and annihilation of a-axis oriented similar to 10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180 degrees switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O-3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains.
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