期刊
NANO LETTERS
卷 15, 期 3, 页码 1925-1929出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl5047736
关键词
Scanning tunneling microscopy/spectroscopy; graphene; transition metal dichalehogenides; defects; scattering
类别
资金
- NSF [DMR-0953784]
- Nanoelectronics Research Initiative
- Intel
- NSF REU program [PHY-1156753]
- NSF MRSEC program [DMR-0819860]
- Direct For Mathematical & Physical Scien [0953784] Funding Source: National Science Foundation
Semiconducting transition metal clichalchogenides (TMD) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural,and electronic properties of graphene On TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.
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