期刊
NANO LETTERS
卷 15, 期 11, 页码 7314-7318出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b02561
关键词
Silicon; quantum dot; heavy hole; spin-orbit interaction; Pauli spin blockade
类别
资金
- Australian Research Council [DP120102888, DP120101859, DP150100237, CE110001027]
- U.S. Army Research Office [W911NF-13-1-0024]
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor similar to 0.93 and the strength of spin-orbit interaction similar to 110 mu eV can be obtained. The demonstrated strong spin-orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.
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