期刊
NANO LETTERS
卷 16, 期 1, 页码 562-567出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04234
关键词
CVD graphene; grain boundary; 1/f noise; Hooge model; transmission probability
类别
资金
- Thematic Unit of Excellence under Nanomission, Department of Science and Technology, Government of India
- CSIR
Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device quality and their electronic performance. Here we show that the grain boundaries in graphene which induce additional scattering of carriers in the conduction channel also act as an additional and strong source of electrical noise especially at the room temperature. From graphene field effect transistors consisting of single GB, we find that the electrical noise across the graphene GBs can be nearly 10 000 times larger than the noise from equivalent dimensions in single crystalline graphene. At high carrier densities (n), the noise magnitude across the GBs decreases as proportional to 1/n, suggesting Hooge-type mobility fluctuations, whereas at low n close to the Dirac point, the noise magnitude could be quantitatively described by the fluctuations in the number of propagating modes across the GB.
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