期刊
NANO LETTERS
卷 15, 期 12, 页码 8049-8055出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03450
关键词
Ferroelectric; domain wall; metallic; scanning probe microscopy
类别
资金
- European Research Council under the EU [268058, 620193]
- Swiss National Science Foundation [200020144454, 200020_156082, 200020_153177]
- Section for Development and Cooperation of the Swiss Foreign Ministry [CH-3-SMm-01/02]
- European Research Council (ERC) [620193, 268058] Funding Source: European Research Council (ERC)
- Swiss National Science Foundation (SNF) [200020_153177, 200020_156082] Funding Source: Swiss National Science Foundation (SNF)
Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic domain-walls of the ubiquitous ferroelectric Pb(Zr,Ti)O-3 using scanning force microscopy down to a temperature of 4 K. New walls created at 4 K by pressure exhibit similar robust and intrinsic conductivity. Atomic resolution electron energy-loss spectroscopy confirms the conductivity confinement at the wall. This work provides a new concept in domain-wall nanoelectronics.
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