期刊
NANO LETTERS
卷 15, 期 12, 页码 8062-8069出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03484
关键词
semiconductor nanowire; gallium phosphide; wurtzite; zincblende; monolayer growth; supersaturation
类别
资金
- Dutch Organization for Scientific Research [NWO-VICI 700.10.441]
- Dutch Technology Foundation [STW 12744]
- Philips Research
- FAPESP [2013/24902-3]
The growth of wurtzite/zincblende (WZ and ZB, respectively) superstructures opens new avenues for band structure engineering and holds the promise of digitally controlling the energy spectrum of quantum confined systems. Here, we study growth kinetics of pure and thus defect-free WZ/ZB homostructures in GaP nanowires with the aim to obtain monolayer control of the ZB and WZ segment lengths. We find that the Ga concentration and the supersaturation in the catalyst particle are the key parameters determining growth kinetics. These parameters can be tuned by the gallium partial pressure and the temperature. The formation of WZ and ZB can be understood with a model based on nucleation either at the triple phase line for the WZ phase or in the center of the solid liquid interface for the ZB phase. Furthermore, the observed delay/offset time needed to induce WZ and ZB growth after growth of the other phase can be explained within this framework.
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