期刊
NANO LETTERS
卷 16, 期 1, 页码 374-380出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03950
关键词
Silicon; germanium; axial; heterostructure nanowires; solvent vapor growth; aberration corrected STEM
类别
资金
- Science Foundation Ireland (SFI) [11PI-1148]
- Intel Ireland
- Irish Research Council
- Engineering and Physical Sciences Research Council (EPSRC)
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more difficult Ge-Si transition enabled by inclusion of a quench sequence in the reaction. This approach allows for alternating between pure Si and pure Ge segments along the entire nanowire length with good control of the respective segment dimensions. The multisegment heterostructure nanowires presented are Ge Si, Si Ge Si, Ge-Si-Ge, Si-Ge-Si-Ge, and Si-Ge-Si-Ge-Si-Ge. The interfacial abruptness of the Ge to Si interface is also determined through the use of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy.
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