期刊
NANO LETTERS
卷 15, 期 6, 页码 3657-3663出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl504051x
关键词
Si quantum dots; type-II energy level aligned interface; band gap tuning CT state; hydrosilylation
类别
资金
- Renewable Energy Materials Research Science and Engineering Center (REMRSEC) [DMR-0820518]
- Colorado School of Mines
- National Science Foundation
- National Renewable Energy Laboratory (NREL)
The quantum confinement and enhanced optical properties of silicon quantum dots (SiQDs) make them attractive as an inexpensive and nontoxic material for a variety of applications such as light emitting technologies (lighting, displays, sensors) and photovoltaics. However, experimental demonstration of these properties and practical application into optoelectronic devices have been limited as SiQDs are generally passivated with covalently bound insulating alkyl chains that limit charge transport. In this work, we show that strategically designed triphenylamine-based surface ligands covalently bonded to the SiQD surface using conjugated vinyl connectivity results in a 70 nm red-Shifted photoluminescence relative to their decyl-capped control counterparts. This suggests that electron density from the SiQD is delocalized into the surface ligands to effectively create a larger hybrid QD with possible macroscopic charge transport properties.
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