Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨00(1)over-bar⟩ In As Nanowires

In this study, we demonstrate the epitaxial growth of < 00 (1) over bar > defect-free zinc-blende structured InAs nanowires on GaAs {111}(B) substrate using Au catalysts in molecular beam epitaxy. It has been found that the catalysts and their underlying < 00 (1) over bar > nanowires have the orientation relationship of {11 (0) over bar3}(C)//{00 (2) over bar}(InAs) and [3 (3) over bar 02](C)//[11 (0) over bar](InAs) due to their small in-plane lattice mismatches between their corresponding lattice spacings perpendicular to the {00 (1) over bar} atomic planes of the nanowires, leading to the formation of the {00 (1) over bar} catalyst/nanowire interfaces, and consequently the formation of < 00 (1) over bar > nanowires. This study provides a practical approach to manipulate the crystal structure and structural quality of III-V nanowires through carefully controlling the crystal phase of the catalysts.