期刊
NANO LETTERS
卷 15, 期 6, 页码 3757-3762出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00276
关键词
Nanowires; III-V semiconductors; vapor-phase epitaxy; GaAs; transmission electron microscopy; doping p-n junction
类别
资金
- European Research Council under the European Union [336126]
- European Union [FP7-People-2013-ITN, 608153]
- PhD4Energy
- Swedish Research Council (VR)
- Knut and Alice Wallenberg Foundation (KAW)
- Nanometer Structure Consortium at Lund University (nmC@LU)
- European Research Council (ERC) [336126] Funding Source: European Research Council (ERC)
The widespread use of Au as a seed particle in the fabrication of semiconductor nanowires presents a fundamental limitation to the potential incorporation of such nanostructures into electronic devices. Although several other growth techniques have been demonstrated, the use of alternative seed particle metals remains an underexplored but potentially very promising way to influence the properties of the resulting nanowires while simultaneously avoiding gold. In this Letter, we demonstrate the use of Sn as a seed particle metal for GaAs nanowires grown by metal-organic vapor phase epitaxy. We show that vertically aligned and stacking defect-free GaAs nanowires can be grown with very high yield. The resulting nanowires exhibit Esaki diode behavior, attributed to very high n-doping of the nanowire core with Sn, and simultaneous C-doping of the radial overgrowth. These results demonstrate that the use of alternative seed particle metals is a potentially important area to explore for developing nanowire materials with controlled material properties.
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