4.3 Article

Effect of contact material on amorphous InGaZnO thin-film transistor characteristics

期刊

出版社

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.03CC04

关键词

-

资金

  1. Grants-in-Aid for Scientific Research [25820125] Funding Source: KAKEN

向作者/读者索取更多资源

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) having several metals, namely Ag, Ti, and Mo, as the source and drain electrodes were characterized. TFTs with Ti and Mo electrodes showed drain current-gate voltage characteristics without fluctuation. However, TFTs with Ag electrodes indicated a low noisy on-state current at a large channel length under a low drain-source voltage condition. The source and drain resistances [Rs/d (O)] of the TFTs with each of the three metals were calculated from the IDS-VGS characteristics. The Rs/d values of the Ag, Ti, and Mo samples reached 4 x 10(4), 2 x 10(4), and 1 x 10(4) Omega, respectively. This implies that a spatial potential barrier exists at the a-IGZO/Ag interface and that the resistance of the potential barrier changes with the application of gate voltage. (c) 2014 The Japan Society of Applied Physics

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据