期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 53, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.020304
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资金
- Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
- Japan Society for the Promotion of Science [21226008]
Dislocations in n- and p-type substrates as well as in epitaxial layers (epilayers) were clearly identified using a photoluminescence (PL) imaging technique. Dislocations in epilayers show large/small bright spots or lines in infrared PL images, which correspond to threading screw/edge dislocations (TSDs/TEDs) or basal plane dislocations (BPDs), respectively. In contrast, dislocations in substrates exhibit large/small dark spots or dark lines in infrared PL images, corresponding to TSDs/TEDs or BPDs, respectively. These different features (bright/dark contrast) of dislocations may originate from the different densities of point defects or impurities. (C) 2014 The Japan Society of Applied Physics
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