期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 53, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.04EC20
关键词
-
资金
- IMEC
- KULeuven
The onset of the 22nm node introduced three dimensional tri-gate transistors into high-volume manufacturing for improved electrostatics. The next generations of fin nMOSFETs are predicted to be InGaAs based. Due to the ternary nature of InGaAs, stoichiometric and structural modifications could affect the electronic properties of the etched fin. In this work we have created InGaAs fins down to 35nm fin width with atomic surface structure kept nearly identical to that of the bulk. Our experimental and simulation results show the impact of surface stoichiometry and fin profile on electrical performance. (C) 2014 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据