期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 53, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.04EF10
关键词
-
资金
- IT R&D program of MKE/KEIT [10035173]
The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O-2 or N2O), or plasma treatment (CF4 or SF6) before SiNx passivation. Among these treatments, SF6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current-voltage (I-V) characteristics most effectively. (C) 2014 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据