期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 53, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.021201
关键词
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资金
- SINANO-SONY joint program [Y1AAQ11001]
- National Natural Science Foundation of China [Y2CCQ61001]
- International Cooperation Projects of Suzhou City [Y2SAQ31001]
We report a GaAs tunnel junction crown by all-solid-state molecular beam epitaxy (MBE), using tellurium (Te) and magnesium (Mg) as n- and p-type dopants, respectively. The growth conditions, including V/III ratio, and growth rate, growth temperature, were optimized. Through these optimizations, Te- and Mg-doped GaAs with high carrier concentrations as well as good mobilities were obtained. A GaAs tunnel junction with a peak current density of 21 A/cm(2) was demonstrated. (C) 2014 The Japan Society of Applied Physics
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