GaAs tunnel junction grown using tellurium and magnesium as dopants by solid-state molecular beam epitaxy

We report a GaAs tunnel junction crown by all-solid-state molecular beam epitaxy (MBE), using tellurium (Te) and magnesium (Mg) as n- and p-type dopants, respectively. The growth conditions, including V/III ratio, and growth rate, growth temperature, were optimized. Through these optimizations, Te- and Mg-doped GaAs with high carrier concentrations as well as good mobilities were obtained. A GaAs tunnel junction with a peak current density of 21 A/cm(2) was demonstrated. (C) 2014 The Japan Society of Applied Physics