相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation
Akihiro Ikeda et al.
APPLIED PHYSICS LETTERS (2013)
Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution
Koji Nishi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
Song QingWen et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2012)
Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production
Glenn G. Jernigan et al.
NANO LETTERS (2009)
Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
P. Brosselard et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Effect of laser field and thermal stress on diffusion in laser doping of SiC
Sachin Bet et al.
ACTA MATERIALIA (2007)
Characterization of n-type layers formed in (11-20)-4H-SiC by phosphorus ion implantation
N. Yanagida et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2007)
Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
Z. Tian et al.
ACTA MATERIALIA (2006)
Electrical transport properties of aluminum-implanted 4H-SiC
J Pernot et al.
JOURNAL OF APPLIED PHYSICS (2005)
Effects of different laser sources and doping methods used to dope silicon carbide
Z Tian et al.
ACTA MATERIALIA (2005)
Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers
H Matsuura et al.
JOURNAL OF APPLIED PHYSICS (2004)
Implantation-induced defects in silicon carbide
G Pensl et al.
PHYSICA B-CONDENSED MATTER (2003)
Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
M Laube et al.
JOURNAL OF APPLIED PHYSICS (2002)
Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC
F Schmid et al.
JOURNAL OF APPLIED PHYSICS (2002)
Status and prospects for SiC power MOSFETs
JA Cooper et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)
Monte Carlo study of hole mobility in Al-doped 4H-SiC
A Martinez et al.
JOURNAL OF APPLIED PHYSICS (2002)
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
K Fujihira et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)
N-type doping of 4H-SiC with phosphorus co-implanted with C or Si
L Zhu et al.
JOURNAL OF ELECTRONIC MATERIALS (2001)
Activation of aluminum implanted at high doses in 4H-SiC
JM Bluet et al.
JOURNAL OF APPLIED PHYSICS (2000)
Phosphorus implantation into 4H-silicon carbide
MA Capano et al.
JOURNAL OF ELECTRONIC MATERIALS (2000)
分享论文
