期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 53, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.06JF03
关键词
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资金
- JSPS [25289105]
- Grants-in-Aid for Scientific Research [25289105, 26420309] Funding Source: KAKEN
We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 x 10(20)cm(-3) near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 x 10(11)cm(-2) . In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC. (C) 2014 The Japan Society of Applied Physics
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