期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.04CF09
关键词
-
High quality SiO2/Al2O3 gate stack has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor. We confirmed that Al2O3 could realize a low interface-state density between Al2O3 and GaN, however, the breakdown field was low. By incorporating the merits of both Al2O3 and SiO2, which has a high breakdown field and a large charge-to-breakdown, SiO2/Al2O3 gate stack structure has been employed in GaN MOS devices. The structure shows a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-to-breakdown. The SiO2/Al2O3 gate stack has also been applied to AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET). The MOS-HFET shows excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm(2) V-1 s(-1). (C) 2013 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据