期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.04CP05
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资金
- NEDO project Novel Semiconductor Power Electronics Project Realizing Low Carbon-Emission Society
The relationship between stacking faults and the position of the leakage current inside a triangular defect was analyzed. Triangular defects are categorized into two types on the basis of the current-voltage (I-V) characteristics. It was found that stacking faults (SFs) of the 3C structure inside a triangular defect increase leakage current at a reverse bias voltage as well as forward current at a low bias voltage, while SFs of the SF(4, 2) structure inside a triangular defect do not lead to deterioration of device performance in this case. (C) 2013 The Japan Society of Applied Physics
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