期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 5, 页码 -出版社
IOP Publishing Ltd
DOI: 10.7567/JJAP.52.05DC09
关键词
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资金
- Ministry of Education, Culture, Sports, Science and Technology, Japan [22350082, 23550208, 24655173]
- Murata Science Foundation
- Grants-in-Aid for Scientific Research [25248045, 23550208, 24655173] Funding Source: KAKEN
We have improved a vapor-phase crystal growth method. The method is characterized by a low-rate molecular gas flow under a quasi-equilibrium condition. The obtained crystals can be applicable to basic and applied research on organic devices. Using the present method, we grew crystals of terminal-substituted alpha-sexithiophene (6T) derivatives. These have phenyl substituent groups (P6T) or methyl substituent groups (M6T) at both molecular terminals. We made field-effect transistors using these crystals. Their maximum hole mobilities were more than 0.1 cm(2).V-1.s(-1). Of these devices, the P6T device showed light emissions under applied alternating-current gate voltages. The emissions became rapidly intense with increasing gate voltage amplitude. (C) 2013 The Japan Society of Applied Physics
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