期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.03BB03
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We performed an X-ray photoelectron spectroscopy (XPS) depth-profiling study on the materials used in amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with Ti and Mo source/drain (S/D) electrodes. The XPS results suggested that there are some differences between the interface regions of Ti/a-IGZO and Mo/a-IGZO for different chemical states of the materials. The chemical states of the back-channel surfaces were also found to be different between the TFTs with Ti and Mo S/D electrodes. In addition, we fabricated indium-gallium-zinc-titanium oxide composite thin films by deposition using multitarget co-sputtering. The electronic structure of these films observed by XPS is similar to that of the Ti/a-IGZO interface region. The fabricated films were found to have a very low resistivity, much lower than that of an a-IGZO film using typical TFT fabrication processes. (c) 2013 The Japan Society of Applied Physics
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