期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.04CJ01
关键词
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资金
- JSPS KAKENHI [22246040, 24102703]
- JST-PRESTO
- Yazaki Memorial Foundation for Science and Technology
- Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)
- Japan Society for the Promotion of Science
- Global COE Program, Photonics Integration-Core Electronics'', MEXT
- Grants-in-Aid for Scientific Research [24656201, 24102703, 22246040, 12J05629] Funding Source: KAKEN
We demonstrate gating and charge sensing functions of a lithographically defined single electron transistor (SET). The electrochemical potential of the SET is modulated by applying a voltage to both the source and drain electrodes. The SET integrated with a double quantum dot (DQD) works as a gate electrode for the DQD. Charge transitions in the DQD are detected by the SET through its charge sensing function. This dual function of the SET is useful for saving space in crowded devices with many gates and charge sensors, toward the integration of multiqubits for quantum computation. (C) 2013 The Japan Society of Applied Physics
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