期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 51, 期 2, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.51.02BJ08
关键词
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资金
- Ministry of Education, Culture, Sports, Science and Technology [21000004]
- Funding Program for World-Leading Innovative R&D on Science and Technology
- Global Center of Excellence at Tokyo Institute of Technology
We investigate cross spectral density between tunneling currents through closely spaced point contacts (PCs) in a semiconductor heterostructure. Analysis of 1/f noise, which originates from background charge fluctuations, is expected to reveal the characteristics of a charge detector and screened Coulomb potential in the device. However, the common resistance in the measurement circuit and the leads of the PCs causes a significant negative correlation. We find that this negative correlation is enhanced when the common electrical channel becomes so narrow that it has only a few one-dimensional conductive modes. Our finding suggests the importance of the circuit environment in integrating multiple charge detectors. (C) 2012 The Japan Society of Applied Physics
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