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Impact of Resist Shrinkage and Its Correction in Nanoimprint Lithography

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IOP PUBLISHING LTD
DOI: 10.1143/JJAP.51.06FJ06

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Relative critical dimension (CD) errors in nanoimprint lithography are estimated by numerical simulation for various pattern sizes. From the results, transfer functions to estimate the CD errors are proposed, which are expressed similarly to a low- or high-pass filter in terms of the spatial frequency. Using the transfer functions, the mold pattern sizes are corrected to compensate the shrinkage. (C) 2012 The Japan Society of Applied Physics

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