期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 51, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.51.041102
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资金
- Next Generation Memory New Technology
- Hynix Semiconductor Inc.
- National Research Foundation of Korea [과C6A2001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10(4) s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments. (C) 2012 The Japan Society of Applied Physics
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