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M. El Kurdi et al.
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S. Klinger et al.
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M. Buljan et al.
NANOTECHNOLOGY (2009)
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Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal-insulator-semiconductor characteristics
Koji Kita et al.
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Long Chen et al.
OPTICS EXPRESS (2008)
Silicide and germanide technology for contacts and gates in MOSFET applications
Shigeaki Zaima et al.
THIN SOLID FILMS (2008)
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu et al.
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Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Annelies Delabie et al.
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2006)
Diffusion, activation, and regrowth behavior of high dose P implants in Ge
A Satta et al.
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Germanium n-type shallow junction activation dependences -: art. no. 091909
CO Chui et al.
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Three-dimensional metal gate-high-κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devices
DS Yu et al.
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Type-I Ge/Ge1-x-ySixSny strained-layer heterostructures with a direct Ge bandgap
J Menéndez et al.
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Activation and diffusion studies of ion-implanted p and n dopants in germanium
CO Chui et al.
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Strain-induced band gap shrinkage in Ge grown on Si substrate
Y Ishikawa et al.
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Mechanisms of diffusion of boron impurities in SiO2 -: art. no. 075901
M Otani et al.
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Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers
LM Giovane et al.
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Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference
K Prabhakaran et al.
THIN SOLID FILMS (2000)
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