期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 50, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.095502
关键词
-
资金
- Akasaki Research Center of Nagoya University
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) [18069006, 21360007, 21560014]
- Japan Science and Technology Agency (JST)
- Grants-in-Aid for Scientific Research [21360007, 21560014] Funding Source: KAKEN
In this paper we report the growth of Si-doped AlGaN on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) with an in situ monitoring system to fabricate a high-quality film with controlled thickness. The AlN mole fraction in AlGaN can be controlled by adjusting the growth temperature. We also discuss the quality and growth mechanism of AlGaN on AlN. GaN and AlGaN with an AlN mole fraction of 0.28 were free from stress because of the occurrence of three-dimensional (3D) growth. The lattice constant a of AlGaN with an AlN mole fraction of 0.40 was larger than that at an AlN mole fraction of 0.28 despite the two-dimensional (2D) growth mode. This indicates that the lattice mismatch between AlGaN and the underlying AlN adversely affects the crystal quality. AlGaN with an AlN mole fraction of over 0.60 was coherently grown on AlN owing to the fact that the AlN/sapphire template used in this work was subjected to compression. For this reason, in the samples with an AlN mole fraction of over 0.6, the crystal quality was high because of the coherent growth on the underlying AlN. Moreover, Si doping was performed for AlGaN. The carrier concentration increased linearly up to a Si concentration of 2 x 10(18) cm(-3), indicating that the activation rate was approximately 1. (C) 2011 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据