Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm(2) V-1 s(-1). Up to this point, we have focused on the contact properties as performance killers, as a very small density of states in graphene might suppress the current injection from metal to graphene. This paper systematically reviews the metal/graphene contact properties and discusses the present status and future requirements of the specific contact resistivity. (C) 2011 The Japan Society of Applied Physics