期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 50, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.052101
关键词
-
资金
- ONR
- OSU Institute for Materials Research (IMR)
- Scientific and Technological Research Council of Turkey (TUBITAK) [2219]
We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N-2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In0.29Ga0.71N quantum wells were grown at a temperature of 600 degrees C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm(2). This work is the first demonstration of an N-polar LED with emission in the green wavelength range. (C) 2011 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据