期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 50, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.04DG06
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资金
- National Science Council (NSC) of Taiwan, R. O. C. [NSC-97-2221-E-274-013, NSC-99-2221-E-006-150]
GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1 mm(2) show a typical increase in light output power by 68% at 350 mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation. (C) 2011 The Japan Society of Applied Physics
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