4.3 Article

Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS
卷 50, 期 12, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.128001

关键词

-

向作者/读者索取更多资源

A Cu2ZnSnS4 (CZTS) single crystal was grown at 900 degrees C, which is less than its melting point (962 degrees C) using a traveling heater method, which is one of the solution growth methods. No twins and no secondary phases could be distinguished from the Laue and X-ray diffraction patterns, respectively. (C) 2011 The Japan Society of Applied Physics

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据