期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 50, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.128001
关键词
-
A Cu2ZnSnS4 (CZTS) single crystal was grown at 900 degrees C, which is less than its melting point (962 degrees C) using a traveling heater method, which is one of the solution growth methods. No twins and no secondary phases could be distinguished from the Laue and X-ray diffraction patterns, respectively. (C) 2011 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据